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| Si2341DS New Product Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 30 FEATURES D TrenchFETr Power MOSFETS ID (A)b rDS(on) (W) 0.072 @ VGS = - 10 V 0.120 @ VGS = - 4.5 V APPLICATIONS D Load Switch D PA Switch - 2.8 - 2.0 TO-236 (SOT-23) G 1 3 D Ordering Information: SI2341DS-T1 S 2 Top View Si2341DS (F1)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)b Pulsed Drain Currenta TA= 25_C TA= 70_C ID IDM IS TA= 25_C TA= 70_C PD TJ, Tstg - 0.75 0.9 0.57 - 55 to 150 Symbol VDS VGS 5 sec - 30 "20 - 2.8 - 2.2 - 12 Steady State Unit V - 2.5 - 2.0 A - 0.6 0.71 0.45 W _C Continuous Source Current (Diode Conduction)b Power Dissipationb Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb Maximum Junction-to-Ambientc Maximum Junction-to-Foot (Drain) Notes a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 Board, t v 5 sec. c. Surface Mounted on FR4 Board. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 72263 S-31675--Rev. B, 11-Aug-03 www.vishay.com RthJA RthJF Symbol Typical 115 140 60 Maximum 140 175 75 Unit _C/W 1 Si2341DS Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-Resistance Drain Source On Resistancea Forward Transconductancea Diode Forward Voltage V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS( ) DS(on) gfs VSD VGS = 0 V, ID = - 10 mA VDS = VGS, ID = - 250 mA VDS = 0 V, VGS = "20 V VDS = - 24 V, VGS = 0 V VDS = - 24 V, VGS = 0 V, TJ = 55_C VDS v - 5 V, VGS = - 10 V VGS = - 10 V, ID = - 2.8 A VGS = - 4.5 V, ID = - 2.0 A VDS = - 5 V, ID = - 2.8 A IS = - 0.75 A, VGS = 0 V -6 0.057 0.090 8.0 - 0.8 - 1.2 0.072 0.120 W S V - 30 - 1.0 - 3.0 "100 -1 - 10 mA A V nA Symbol Test Conditions Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd Ciss Coss Crss VDS = - 15 V, VGS = 0, f = 1 MHz VDS = - 15 V, VGS = - 10 V ID ^ - 2.8 A 9.5 1.5 2.5 400 95 70 pF 15 nC Switchingc td(on) Turn-On Turn On Time tr td(off) tf Notes a. Pulse test: PW v300 ms duty cycle v2%. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. S FaxBack 408-970-5600 VDD = - 15 V, RL =15 W ID ^ - 1 0 A VGEN = - 4.5 V 1.0 A, 45 RG = 6 W 7 15 20 20 15 25 ns 30 30 Turn-Off Time www.vishay.com 2 Document Number: 72263 S-31675--Rev. B, 11-Aug-03 Si2341DS New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 12 Vishay Siliconix Output Characteristics VGS = 10 thru 5 V 12 Transfer Characteristics TC = - 55_C 10 I D - Drain Current (A) I D - Drain Current (A) 10 25_C 8 8 125_C 6 6 3V 4 4 2 2V 0 0 2 4 6 8 10 2 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.15 700 600 r DS(on)- On-Resistance ( W ) 0.12 VGS = 4.5 V 0.09 VGS = 10 V 0.06 C - Capacitance (pF) 500 400 300 200 Capacitance Ciss 0.03 100 Crss 0.00 0 2 4 6 8 10 0 0 5 10 Coss 15 20 25 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 10 VDS = 15 V ID = 3 A V GS - Gate-to-Source Voltage (V) 8 Gate Charge 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 3 A 1.4 r DS(on)- On-Resistance ( W ) (Normalized) 0 2 4 6 8 10 6 1.2 4 1.0 2 0.8 0 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 72263 S-31675--Rev. B, 11-Aug-03 www.vishay.com 3 Si2341DS Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 20 10 r DS(on)- On-Resistance ( W ) 0.8 I S - Source Current (A) 1.0 On-Resistance vs. Gate-to-Source Voltage TJ = 150_C 0.6 ID = 3 A 0.4 1 TJ = 25_C 0.2 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 0.0 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.6 10 Single Pulse Power 0.4 V GS(th) Variance (V) 8 ID = 250 mA Power (W) 0.2 6 0.0 4 TA = 25_C Single Pulse - 0.2 2 - 0.4 - 50 0 - 25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 1000 TJ - Temperature (_C) Time (sec) Safe Operating Area, Junction-to-Case 100.0 Limited by rDS(on) 10.0 I D - Drain Current (A) 10 ms 100 ms 1.0 1 ms 10 ms 0.1 TA = 25_C Single Pulse 0.01 0.1 1 10 100 ms dc, 100 s, 10 s, 1 s 100 VDS - Drain-to-Source Voltage (V) Square Wave Pulse Duration (sec) www.vishay.com Document Number: 72263 S-31675--Rev. B, 11-Aug-03 4 Si2341DS New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance Vishay Siliconix 0.2 Notes: 0.1 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 62.5_C/W Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Square Wave Pulse Duration (sec) Document Number: 72263 S-31675--Rev. B, 11-Aug-03 www.vishay.com 5 |
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